BUH417D Inchange Semiconductor Company, BUH417D Datasheet - Page 2
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BUH417D
Manufacturer Part Number
BUH417D
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.BUH417D.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
THERMAL CHARACTERISTICS
SYMBOL
SYMBOL
V
CEO(SUS)
V
V
R
h
h
I
I
CEsat
BEsat
CES
EBO
V
FE-1
FE-2
th j-c
F
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
Thermal resistance from junction to case
PARAMETER
PARAMETER
I
I
I
V
T
V
I
I
I
C
C
C
C
C
F
j
CE
EB
=4A
=100mA ;I
=4A ; I
=4A ; I
=125℃
=1A ; V
=4A ; V
=1700V
=5V; I
2
B
B
CE
CE
=1A
=1A
CONDITIONS
C
=0
=5V
=5V
;
B
V
=0
BE
=0
Product Specification
MIN
700
8
6
TYP.
BUH417D
MAX
2.27
MAX
200
1.5
1.3
1.0
2.0
36
2
UNIT
℃/W
UNIT
mA
mA
V
V
V
V