UNR31A3 Panasonic Corporation of North America, UNR31A3 Datasheet
UNR31A3
Manufacturer Part Number
UNR31A3
Description
Silicon Pnp Epitaxial Planar Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR31A3.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UNR31A300L
Manufacturer:
SANYO
Quantity:
1 000
Part Number:
UNR31A300L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
UNR31A300L
Manufacturer:
PANASONIC
Quantity:
3 808
Company:
Part Number:
UNR31A300L
Manufacturer:
Panasonic
Quantity:
13 351
Part Number:
UNR31A300LSO
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors with built-in Resistor
UNR31A3
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
−50
−50
−80
100
125
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00085CED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −3.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: CH
Internal Connection
L
= 1 kΩ
0.23
= 1 kΩ
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(47 kΩ)
−30%
3
0.80
1.20
B
1
−4.9
Min
−50
−50
0.8
80
R
R
(0.40)
±0.05
±0.05
1
2
(47 kΩ)
2
Typ
1.0
47
80
SSSMini3-F1 Package
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
Max
1.2
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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UNR31A3 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR31A3 Silicon PNP epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). UNR31A3 120 100 120 Ambient temperature T (°C) a 250 = − 75° 25°C 200 −25°C 150 100 50 0 −1 −10 −100 ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...