UNR31A1 Panasonic Corporation of North America, UNR31A1 Datasheet - Page 2

• Manufacturer Part Number: UNR31A1
• Description: Silicon Pnp Epitaxial Planar Transistor
• Manufacturer: Panasonic Corporation of North America

UNR31A1
2
−100
−10
120
100
200
160
120
80
60
40
20
−1
80
40
− 0.1
0
0
−1
0
V
CE
Ambient temperature T
= −10 V
Collector current I
Output current I
40
−1
V
h
P
FE
IN
T
−10
 T
25°C
 I
 I
T
80
a
= 85°C
C
a
O
−10
O
C
V
T
(mA)
a
−25°C
(mA)
O
a
= 25°C
= − 0.2 V
(°C)
120
−100
−100
−80
−60
−40
−20
10
0
1
0
0
− 0.6 mA
Collector-emitter voltage V
T
Collector-base voltage V
a
− 0.7 mA
= 25°C
−2
−8
SJH00084BED
− 0.8 mA
C
−4
I
− 0.9 mA
C
ob
−16
 V
 V
−6
−24
CE
CB
I
−8
B
f = 1 MHz
T
= −1.0 mA
a
= 25°C
CB
−32
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
−10
CE
(V)
(V)
−12
−40
− 0.001
− 0.1
− 0.01
−100
− 0.1
−10
−10
−1
−1
−1
0
I
C
/ I
− 0.5
B
Collector current I
= 10
Input voltage V
25°C
V
−1.0
CE(sat)
I
O
 V
−10
−1.5
T
 I
a
= 85°C
IN
−2.0
IN
C
C
V
T
−25°C
(mA)
a
O
(V)
= 25°C
= − 0.2 V
−2.5
−100
−3.0