CTA2N1P Diodes, Inc., CTA2N1P Datasheet

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CTA2N1P

Manufacturer Part Number
CTA2N1P
Description
Complex Transistor Array
Manufacturer
Diodes, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CTA2N1P-7-F
Manufacturer:
DIODES
Quantity:
8 138
Features
Maximum Ratings, Total Device
Maximum Ratings, Q1, MMBT4401 NPN Transistor Element
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Mechanical Data
Notes:
DS30295 Rev. 7 - 2
Combines MMBT4401 type transistor with BSS84 type
MOSFET
Small Surface Mount Package
PNP/N-Channel Complement Available: CTA2P1N
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: A03, See Page 6
Ordering Information: See Page 6
Weight: 0.006 grams (approximate)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
GS
≤ 1.0MΩ
Characteristic
Characteristic
Characteristic
Continuous
Continuous
@T
A
(Note 1)
(Note 1)
= 25°C unless otherwise specified
www.diodes.com
K
J
1 of 6
Q1
C
E
Symbol
Symbol
Symbol
T
Q1
Q1
V
V
V
j
V
V
V
R
, T
A03
P
CBO
CEO
EBO
DSS
DGR
GSS
I
I
θ JA
C
D
d
STG
A
H
G
B
Q2
Q1
D
S
D
Q2
Q2
F
Q2
B C
L
@T
@T
A
A
-55 to +150
= 25°C unless otherwise specified
= 25°C unless otherwise specified
COMPLEX TRANSISTOR ARRAY
Value
Value
Value
-130
150
833
600
±20
-50
-50
6.0
60
40
M
CTA2N1P
All Dimensions in mm
Dim
M
A
B
C
D
F
H
K
L
α
J
© Diodes Incorporated
SOT-363
°C/W
Unit
Unit
Unit
mW
mA
mA
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
°C
Min
0.65 Nominal
V
V
V
V
V
V
CTA2N1P
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25

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CTA2N1P Summary of contents

Page 1

... L M 0.10 α 0° All Dimensions in mm Value Unit 150 mW °C/W 833 °C -55 to +150 @T = 25°C unless otherwise specified A Value Unit 6.0 V 600 25°C unless otherwise specified A Value Unit -50 V -50 V ±20 V -130 mA CTA2N1P © Diodes Incorporated Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° ...

Page 2

... B1 B2 Test Condition = 0V -250µ -50V 0V 25° -50V 0V 125° -25V 0V 25° ±20V -1mA -5V 0.100A D = -25V 0. -25V -30V -0.27A 50Ω -10V GS CTA2N1P © Diodes Incorporated ...

Page 3

... T = 125° +25° -25° 1. 1,000 100 I , COLLECTOR CURRENT (mA 30mA 1mA 10mA 100mA 300mA C 0.1 0. BASE CURRENT (mA) B Fig. 4 Typical Collector Saturation Region CTA2N1P © Diodes Incorporated 100 ...

Page 4

... Fig. 7 Gain Bandwidth Product vs. Collector Current DS30295 Rev MMBT4401 Section 1.0 0.9 0 25°C A 0.7 0.6 0.5 0.4 0 -50°C A 0.2 0.1 1,000 100 Fig. 6 Base Emitter Voltage vs. Collector Current 100 www.diodes.com -50° 25° 150° COLLECTOR CURRENT (mA) C CTA2N1P © Diodes Incorporated 100 ...

Page 5

... - -10V GS -0.8 1 www.diodes.com - GATE-TO-SOURCE VOLTAGE (V) GS Fig. 9 Drain Current vs. Gate Source Voltage V = -10V -0.13A D - 125 100 T , JUNCTION TEMPERATURE (°C) J Fig. 11 On-Resistance vs. Junction Temperature © Diodes Incorporated -8 150 CTA2N1P ...

Page 6

... M = Month ex September 2004 2005 2006 2007 Apr May Jun Jul IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Shipping 3000/Tape & Reel 2008 2009 2010 2011 2012 Aug Sep Oct Nov Dec CTA2N1P © Diodes Incorporated Z D ...

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