CTA2N1P Diodes, Inc., CTA2N1P Datasheet - Page 2

• Manufacturer Part Number: CTA2N1P
• Description: Complex Transistor Array
• Manufacturer: Diodes, Inc.

Electrical Characteristics
Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. 7 - 2
Characteristic
Characteristic
, Q1, MMBT4401 NPN Transistor Element
, Q2, BSS84 P-Channel MOSFET Element
www.diodes.com
V
V
V
Symbol
V
V
Symbol
R
(BR)CBO
(BR)CEO
(BR)EBO
BV
V
CE(SAT)
BE(SAT)
t
t
I
D(OFF)
C
DS (ON)
h
C
CEX
h
I
I
C
D(ON)
2 of 6
I
h
h
h
C
C
GS(th)
g
DSS
GSS
BL
f
t
t
t
t
FE
oe
T
d
cb
eb
ie
re
fe
s
r
f
FS
oss
DSS
iss
rss
Min
-0.8
-50
0.75
.05
Min
100
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6.0
1.0
0.1
1.0
60
40
⎯
⎯
20
40
80
40
⎯
⎯
⎯
⎯
40
⎯
⎯
⎯
⎯
Typ Max
10
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.40
0.75
0.95
100
100
300
500
225
1.2
6.5
8.0
30
15
30
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-100
±10
-2.0
-15
-60
⎯
10
⎯
45
25
12
⎯
⎯
Unit
x 10
µA
µA
nA
nA
pF
pF
pF
ns
ns
MHz
Unit
Ω
V
V
S
nA
nA
kΩ
μS
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
@T
@T
-4
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
A
A
GS
DS
DS
DS
GS
DS
GS
DS
DS
DD
GEN
= 25°C unless otherwise specified
= 25°C unless otherwise specified
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= -50V, V
= -50V, V
= -25V, V
= -25V, I
= V
= -25V, V
= -30V, I
= 0V, I
= ±20V, V
= -5V, I
= 100μA, I
= 150mA, I
= 100μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 500mA, I
= 150mA, I
= 500mA, I
= 50Ω, V
= I
= 35V, V
= 35V, V
= 10V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 10V, I
= 30V, I
= 30V, I
GS
B2
= 2.0V, I
, I
D
D
= 15mA
Test Condition
D
D
= -250µA
D
Test Condition
GS
GS
GS
= 0.100A
GS
= -1mA
DS
= 0.1A
= -0.27A,
C
C
C
C
GS
E
B
C
EB(OFF)
EB(OFF)
B
B
B
B
CE
= 1.0mA,
= 20mA,
= 0V, T
= 0V, T
= 0V, T
= 0V
CE
CE
CE
= 150mA,
= 150mA,
CE
= 0V
= 0
= 0
= 0
= 15mA
= 50mA
= 15mA
= 50mA
= -10V
B1
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 2.0V
= 15mA
= 0.4V
= 0.4V
© Diodes Incorporated
J
J
J
= 25°C
= 125°C
= 25°C
E
C
= 0
= 0
CTA2N1P