YG861S12R Fuji Electric holdings CO.,Ltd, YG861S12R Datasheet - Page 2

• Manufacturer Part Number: YG861S12R
• Description: High Voltage Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(120V / 5A )
Characteristics
160
150
140
130
120
110
100
0.1
10
90
80
70
60
1
8
6
4
2
0
0.0
0
0
IF(AV):Average forward current of center-tap full wave connection
Square wave
Square wave
:Conduction angle of forward current for each rectifier element
Square wave
Current Derating (IF(AV)-Tc) (max.)
Sine wave
0.1
Forward Power Dissipation (max.)
I F (AV)
Forward Characteristic (typ.)
IF(AV)
360°
0.2
Io
360°
V F
Io
2
=180°
=180°
=120°
0.3
=60°
DC
VR=60V
Average Forward Current
Average Forward Current
2
Forward Voltage
0.4
0.5
4
0.6
4
0.7
Square wave
Sine wave
Square wave
Square wave
DC
(V)
Per 1element
6
0.8
Tj=25°C
Tj=150°C
Tj=125°C
Tj=100°C
(A)
(A)
0.9
=180°
=120°
=60°
=180°
1.0
8
6
1000
10
10
10
10
100
10
10
10
-1
-2
-3
-4
Junction Capacitance Characteristic (max.)
1
0
4
2
0
1
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
Reverse Power Dissipation (max.)
Reverse Characteristic (typ.)
20
V
R
V R
V R
VR
360°
40
YG861S12R (5A)
10
Reverse Voltage
Reverse Voltage
Reverse Voltage (V)
60
80
100
100
(V)
(V)
120
DC
Tj=150°C
Tj=100°C
Tj=125°C
=180°
Tj= 25°C
1000
140