2MBI150U4B-120 Fuji Electric holdings CO.,Ltd, 2MBI150U4B-120 Datasheet - Page 10
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2MBI150U4B-120
Manufacturer Part Number
2MBI150U4B-120
Description
Igbt Module
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2MBI150U4B-120.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI150U4B-120
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
2MBI150U4B-120
Quantity:
50
Part Number:
2MBI150U4B-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
10000
10000
40
30
20
10
1000
1000
0
100
100
10
10
1
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=25
1
0
Vcc=600V, Ic=150A, VGE=±15V,
Vcc=600V, Ic=150A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
50
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
10
100
10
ton
150
tr
Eon
Eoff
Err
ton
toff
tf
100
toff
100
200
Tj=25
tr
tf
250
o
o
C
C
o
C
1000
1000
300
25
20
15
10
400
300
200
100
10000
5
0
1000
+VGE=15V, -VGE <= 15V, RG >= 4.7Ω,
0
100
0
10
0
MS5F6059
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=125
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
50
Vcc=600V, VGE=±15V, RG=4.7Ω
Reverse bias safe operating area (max.)
50
Collector-Emitter voltage : VCE [ V ]
400
Collector current : Ic [ A ]
100
Collector current : Ic [ A ]
100
150
800
150
200
200
Eon(25
1200
Tj <= 125
tr
H04-004-03a
10
Eoff(125
Eon(125
Err(125
Eoff(25
Err(25
ton
toff
tf
o
250
250
C)
o
C
13
o
o
C
o
C)
o
C)
o
C)
o
1600
C)
300
C)
300