2MBI200U4H-120 Fuji Electric holdings CO.,Ltd, 2MBI200U4H-120 Datasheet
2MBI200U4H-120
Available stocks
Related parts for 2MBI200U4H-120
2MBI200U4H-120 Summary of contents
Page 1
... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Feb. 09 ’05 Y.Seki T.Miyasaka Feb. 09 ’05 K.Yamada IGBT MODULE 2MBI200U4H-120 MS5F 6035 MS5F6035 H04-004-07b ...
Page 2
Classi- Date Ind. fication Feb.-09 -’05 Enactment Revised characteristics a Revision Oct.-25-’ Applied Content Drawn date Issued date S.Miyashita VCE(sat) (P4/13) MS5F6035 Checked Checked Approved T.Miyasaka ...
Page 3
... Outline Drawing ( Unit : Equivalent circuit 2MBI200U4H-120 MS5F6035 H04-004-03a ...
Page 4
Absolute Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Mounting (*2) Terminals (*3) Torque (*1) All terminals should ...
Page 5
... Indication on module Logo of production 2MBI200U4H-120 Lot.No. 7. Applicable category This specification is applied to IGBT-Module named 2MBI200U4H-120. 8. Storage and transportation notes • The module should be stored at a standard temperature Store modules in a place with few temperature changes in order to avoid condensation on the • ...
Page 6
Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
Page 7
Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
Page 8
Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle ...
Page 9
Collector current vs. Collector-Emitter voltage (typ.) o Tj= chip 500 VGE=20V 15V 12V 400 300 200 100 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip ...
Page 10
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=25 10000 1000 toff ton 100 10 0 100 200 300 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=25 10000 ton 1000 ...
Page 11
Forward current vs. Forward on voltage (typ.) chip 500 400 o Tj=25 C Tj=125 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 0.100 ...
Page 12
This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
Page 13
Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE ...