2MBI75P-140 Fuji Electric holdings CO.,Ltd, 2MBI75P-140 Datasheet

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2MBI75P-140

Manufacturer Part Number
2MBI75P-140
Description
1400v / 75a 2 In One-package Igbt Module P-series
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Part Number
Manufacturer
Quantity
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Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2MBI75P-140
Manufacturer:
FUJI
Quantity:
530
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2MBI75P-140
IGBT Module P-Series
1400V / 75A 2 in one-package
· Small temperature dependence of the turn-off switching loss
· Easy to connect in parallel
· Wide RBSOA (square up to 2 time of rated current) and high short-
· Low loss and soft-switching (reduction of EMI noise)
· General purpose inverter
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Thermal resistance
Contact Thermal resistance
Items
1 :
2 :
4
circuit withstand capability
Thermal resistance characteristics
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Electrical characteristics (at Tj=25°C unless otherwise specified)
Recommendable value : 2.5 to 3.5 N·m(M5)
All terminals should be connected together when isolation test will be done.
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Applications
Maximum ratings and characteristics
Symbols
Symbols
I
I
V
V
C
C
C
t
t
t
t
V
t
Rth(j-c)
Rth(j-c)
Rth(c-f)*
on
off
f
CES
GES
r
rr
GE(th)
CE(sat)
oes
F
ies
res
Mounting *
Terminals *
4
Conditions
V
V
V
V
V
V
V
f=1MHz
V
I
V
R
IGBT
Diode
the base to cooling fin
C
I
I
F
F
GE
CE
CE
GE
GE
CE
GE
CC
GE
G
=75A
=75A, V
=75A
Conditions
=16
=20V, I
=10V
=0V
2
=0V, V
=0V, V
=15V, I
=15V, I
=±15V
2
=600V
Symbol
V
V
I
I
-I
-I
P
T
T
V
C
C
stg
C
C
C
j
GE
CES
GES
iso
p
CE
GE
C
C
C
pulse
=75mA
=75A, Tj=25°C
=75A, Tj=125°C
=0V
=1400V
=±20V
Conditions
Continuous
AC:1min.
1 device
1ms
Characteristics
Characteristics
Min.
Min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
6.0
Typ.
Typ.
7500
1000
Equivalent Circuit Schematic
500
0.05
C1
8.0
2.7
3.3
2.4
Rating
-40 to +125
1400
+150
2500
±20
100
200
150
150
600
3.5
3.5
G1 E1
75
75
Max.
Max.
200
0.21
0.47
1.0
9.0
3.0
1.20
0.60
1.00
0.30
3.3
0.35
C2E1
Unit
Unit
Unit
V
V
A
W
°C
VAC
N·m
mA
nA
V
V
pF
µs
V
µs
°C/W
°C/W
°C/W
G2 E2
E2

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2MBI75P-140 Summary of contents

Page 1

... IGBT Module P-Series 1400V / 75A 2 in one-package Features · Small temperature dependence of the turn-off switching loss · Easy to connect in parallel · Wide RBSOA (square time of rated current) and high short- circuit withstand capability · Low loss and soft-switching (reduction of EMI noise) Applications · ...

Page 2

... Characteristics (Representative) IGBT Module ...

Page 3

... IGBT Module ...

Page 4

... Outline Drawings, mm M232 IGBT Module ...

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