2MBI150U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI150U4H-170 Datasheet - Page 10

• Manufacturer Part Number: 2MBI150U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

10000
10000
1000
1000
200
150
100
100
100
50
10
10
0
0.1
0.1
0
Vcc=900V, Ic=150A, VGE=±15V, Tj= 125°C
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3.3Ω, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=150A, VGE=±15V, Tj= 25°C
Switching loss vs. Gate resistance (typ.)
50
1.0
1.0
Gate resistance : RG [Ω]
ton
toff
Gate resistance : RG [Ω]
tr
tf
Collector current : Ic [A]
100
10.0
10.0
150
200
100.0
100.0
Eoff
Eon
Err
250
ton
toff
tr
tf
1000.0
1000.0
300
10000
1000
400
300
200
100
+VGE=15V,-VGE <= 15V, RG >= 3.3Ω ,Tj <= 125°C
100
70
60
50
40
30
20
10
10
0
0
0
0
Vcc=900V, VGE=±15V, Rg=3.3Ω, Tj=125°C
Switching time vs. Collector current (typ.)
MS5F6144
0
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
toff
Vcc=900V, VGE=±15V, Rg=3.3Ω
50
50
Collector-Emitter voltage : VCE [V]
500
Collector current : Ic [A]
Collector current : Ic [A]
100
100
150
150
1000
200
200
Err(125°C)
1500
ton
tr
tf
10
250
250
Eoff(125°C)
Eon(125°C)
H04-004-03a
Eoff(25°C)
Eon(25°C)
Err(25°C)
13
300
300
a
b