April 1999
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 35A, -600V
• V
• 800A Surge Current Capability
• 800A/ s di/dt Capability
• MOS Insulated Gate Control
• 50A Gate Turn-Off Capability at +150
• Anti-Parallel Diode
Description
The MCT is an MOS Controlled Thyristor designed for switch-
ing currents on and off by negative and positive pulsed control
of an insulated MOS gate. It is designed for use in motor con-
trols, inverters, line switches and other power switching appli-
cations. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like
forward drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
This device features a discrete anti-parallel diode that shunts
current around the MCT in the reverse direction without
introducing carriers into the depletion region.
NOTE: When ordering, use the entire part number.
Formerly developmental type TA9789 (MCT) and TA49054
(diode).
MCTV35P60F1D
Absolute Maximum Ratings
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Cathode Current (See Figure 2)
Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTE: 1. Maximum Pulse Width of 250 s (Half Sine) Assume T
PART NUMBER
T
T
(0.063" (1.6mm) from case for 10s)
TM
C
C
©
= +25
= +90
= -1.35V (Max) at I = 35A and +150
Harris Corporation 1999
Semiconductor
o
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
PART NUMBER INFORMATION
TO-247
PACKAGE
o
T
C with active switching.
C
= +25
M35P60F1D
o
C
o
o
C
C, Unless Otherwise Specified
BRAND
MCTV35P60F1D
J
2-8
Thyristor (MCT) with Anti-Parallel Diode
(Initial) = +90
Package
Symbol
35A, 600V P-Type MOS Controlled
o
C and T
J
(Final) = T
JEDEC STYLE TO-247
J
, T
DRM
K115
GAM
KSM
GA1
STG
K25
KC
G
T
L
MCTV35P60F1D
J
See Figure 11
(Max) = +150
-55 to +150
A
K
-600
1.43
800
800
178
260
60
35
50
20
25
A
File Number
A
o
C
K
GR
G
UNITS
W/
A/ s
o
o
W
V
A
A
A
A
V
V
C
C
o
C
3694.4