SQD50P04-09L Vishay, SQD50P04-09L Datasheet
SQD50P04-09L
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SQD50P04-09L Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD50P04-09L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT - 40 V ± 100 - 50 125 mJ 136 175 °C LIMIT UNIT 50 °C/W 1 ...
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... SQD50P04-09L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.020 ° °C 0.016 125 °C 0.012 0.008 0.004 0.000 80 100 SQD50P04-09L Vishay Siliconix T = 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS T 1 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Case Temperature (°C) C Maximum Drain Current vs. Ambient Temperature www ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65018. Document Number: 65018 S09-1034-Rev. A, 08-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD50P04-09L Vishay Siliconix - www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...