B58601D8010A024 EPCOS AG, B58601D8010A024 Datasheet - Page 5

• Manufacturer Part Number: B58601D8010A024
• Description: Pressure Sensors
• Manufacturer: EPCOS AG

Symbols and Terms
1)
2)
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4)
5)
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AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Pressure sensors
C28 series
Maximum power supply V
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
Operating temperature range T
This is the operating Temperature range T
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted on a TO39 base are tested over a
reduced measuring temperature range of T
Storage temperature range T
If the pressure sensor dies are stored in the temperature range T
will not affect the performance of the pressure sensor dies.
Operating pressure range p
In the operating pressure range 0 to p
Over pressure p
Pressure cycles in the pressure range 0 to p
Burst pressure p
Up to the burst pressure p
tested at room temperature on samples mounted on an aluminium socket by increasing the applied pressure until the
diaphragm is destroyed.
Operating power supply V
The pressure sensor parameters are defined for a power supply voltage of V
voltage range V
coefficient of the offset voltage are defined by:
Total bridge resistance R
The total bridge resistance is defined between pad X5 and X2, X3 (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
Temperature coefficients of resistance
The temperature coefficients of resistance are tested for design verification on samples, mounted on a TO39 base
over a reduced temperature range T
The temperature coefficients of first and second order are defined with the polynomial:
The coefficients
Offset voltage V
The offset voltage V
supply V
It should be noted that this parameter may be influenced by assembly.
Temperature coefficient of offset voltage TCV
The temperature coefficients of offset voltage are defined for a bridge voltage power supply V
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on a TO39 base
over a temperature range T
Therefore TCV
DD
= 5 V. This parameter is tested completely on a wafer (wafer level test measurement).
0+
DD,min
0
and TCV
OV
Rs
berst
0
and
to V
is the output voltage V
TCVo
DD,max
Rs
berst
0-
S
min
DD
DD
are defined for the measurement temperature range by:
are calculated using the three measurement points of R
Gauge pressure sensor die for front side pressure applications
r
the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
= –40 ° C to T
st
R
the ratiometric parameters r(V
S
a
(
V
) T
o
meas
T (
r,max
R
T
max
S
max
,
min
T (
the pressure sensor die output characteristic is as defined in this specification.
a,min
)
meas,min
Rs
= –20 ° C to T
out
max
ov
25
25
V
and
(p = 0 bar gauge) at zero gauge pressure and for a bridge voltage power
do not affect the performance of the pressure sensor dies.
to T
= 135 ° C.
o
r
C
(
0
V
25
C
to T
a,max
)
DD
Rs



1
C
Page 5 of 8
:
meas,max
. Because most of the sensor parameters depend on assembling
)
r
meas
Rs
5 (
T
V [
,
.
max
DD
])
25
) like sensitivity, offset voltage and the temperature
= 80 ° C with T
st,min
[ 5
V
DD
C
] V
TCVo
to T
Rs
st,max
T
DD
25
without applied voltage power supply, this
R
= 5 V. In the operating power supply
V
= 25 ° C.
C
o
T (
s
T
2
(T) at T
min



min
)
25
V
meas,min
o
DD
(
C
25
= 5 V.
, T
C
)
R
and T
meas,max
2009-08-03
.