IRS2336D International Rectifier Corp., IRS2336D Datasheet - Page 18

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IRS2336D

Manufacturer Part Number
IRS2336D
Description
High Voltage 3 Phase Gate Driver Ic
Manufacturer
International Rectifier Corp.
Datasheet

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Application Information and Additional Details
Information regarding the following topics are included as subsections within this section of the datasheet.
IGBT/MOSFET Gate Drive
The IRS2336xD HVICs are designed to drive up to six MOSFET or IGBT power devices. Figures 1 and 2 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to
drive the gate of the power switch, is defined as I
defined as V
generically called V
www.irf.com
IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Enable Input
Fault Reporting and Programmable Fault Clear Timer
Over-Current Protection
Over-Temperature Shutdown Protection
Truth Table: Undervoltage lockout, ITRIP, and ENABLE
Advanced Input Filter
Short-Pulse / Noise Rejection
Integrated Bootstrap Functionality
Bootstrap Power Supply Design
Separate Logic and Power Grounds
Tolerant to Negative V
PCB Layout Tips
Additional Documentation
Figure 1: HVIC sourcing current
(or COM)
HO
(or V
(or LO)
V
HO
for the high-side power switch and V
V
S
B
CC
OUT
)
and in this case does not differentiate between the high-side or low-side output voltage.
+
V
-
HO
(or V
S
Transients
LO
I
O+
)
O
. The voltage that drives the gate of the external power switch is
LO
for the low-side power switch; this parameter is sometimes
18
Figure 2: HVIC sinking current
(or COM)
(or V
(or LO)
V
HO
V
S
B
CC
)
IRS2336xD Family
© 2008 International Rectifier
I
O-

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