IRS2336D International Rectifier Corp., IRS2336D Datasheet - Page 34

• Manufacturer Part Number: IRS2336D
• Description: High Voltage 3 Phase Gate Driver Ic
• Manufacturer: International Rectifier Corp.

Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at
the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such conditions,
it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2) minimize the low-side
emitter to negative bus rail stray inductance. However, where negative V
may be taken to reduce the spike. This includes placing a resistor (5 Ω or less) between the V
node (see Figure 36), and in some cases using a clamping diode between V
at
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
www.irf.com
www.irf.com
V
CC
for more detailed information.
Figure 36: V
D
BS
V
HO
V
COM
V
LO
B
S
SS
C
BS
R
S
VS
resistor
DC+ BUS
DC- BUS
Load
To
34
Figure 37: V
V
CC
S
D
SS
BS
spikes remain excessive, further steps
and V
IRS2336xD Family
V
HO
V
COM
V
LO
B
SS
S
S
clamping diode
C
D
S
BS
VS
R
(see Figure 37). See DT04-4
VS
DC+ BUS
DC- BUS
© 2008 International Rectifier
S
pin and the switch
Load
To