MR18R1628EG0 Samsung Semiconductor, Inc., MR18R1628EG0 Datasheet - Page 8

• Manufacturer Part Number: MR18R1628EG0
• Description: The Rimm Module Is A General Purpose High- Performance Memory Module Suitable For Use In A Broad Range Of Applications Including Computer Memory, Personal Computers, Workstations And Other Applications Where High Bandwidth And Low Latency Are Requi
• Manufacturer: Samsung Semiconductor, Inc.

MR16R1624(8/G)EG0
MR18R1624(8/G)EG0
RIMM Module Current Profile
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
c. Current values represent X16(Non-Ecc) / X18(Ecc)
I
I
I
I
I
I
V
DD1
DD2
DD3
DD4
DD5
DD6
DD
I
DD
= 2.5V, V
TERM
RIMM Module power conditions
One RDRAM device in Read
ance in NAP mode
One RDRAM device in Read
ance in Standby mode
One RDRAM device in Read
ance in Active mode
One RDRAM device in Write, bal-
ance in NAP mode
One RDRAM device in Write, bal-
ance in Standby mode
One RDRAM device in Write, bal-
ance in Active mode
Number of 256/288Mb RDRAM devices
= 1.8V, V
RIMM Module Capacity
REF
= 1.4V and V
DIL
Table 7: RIMM Module Current Profile
b
b
b
, bal-
, bal-
, bal-
= V
REF
a
- 0.5V.
Freq
-1066
-1066
-1066
-1066
-1066
-1066
-800
-800
-800
-800
-800
-800
Page 7
512/576MB
2275/2325
1985/2025
3100/3150
2585/2625
2265/2315
1970/2005
3090/3140
2570/2605
760/810
620/660
750/800
605/640
Max
16
c
256/288MB
1435/1485
1225/1265
1820/1870
1505/1545
1425/1475
1210/1245
1810/1860
1490/1525
728/778
588/628
718/768
573/608
Max
8
Version 1.0 May 2004
128/144MB
1015/1065
1005/1055
1180/1230
1170/1220
965/1005
712/762
572/612
845/885
702/752
557/592
830/865
950/985
Max
4
Unit
mA
mA
mA
mA
mA
mA