FMC11N60E Fuji Electric holdings CO.,Ltd, FMC11N60E Datasheet - Page 2

• Manufacturer Part Number: FMC11N60E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC11N60E
0.01
100
200
180
160
140
120
100
0.1
80
60
40
20
20
15
10
10
5
0
1
0
0.01
0
0
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
gfs=f(ID):80
Typical Output Characteristics
ID=f(VDS):80
25
5
0.1
µ
s pulse test,VDS=25V,Tch=25 C
µ
s pulse test,Tch=25
50
VDS [V]
10
ID [A]
Tc [
75
1
°
C]
100
15
°
C
10
125
°
20
100
150
2
2
10
10
10
10
10
10
10
10
10
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10
10
-1
-2
2
1
0
-1
-2
-3
-4
10
1
0
2
0
Safe Operating Area
I
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
-1
D
VGS=4.0V
=f(V
Power loss waveform :
Power loss waveform :
Square waveform
Square waveform
DS
):Duty=0(Single pulse),Tc=25°C
P
P
P
4.5V
t
10
t
D
D
D
3
5
0
µ
s pulse test,VDS=25V,Tch=25
µ
s pulse test,Tch=25 C
VDS [V]
VGS[V]
ID [A]
10
10
4
1
5V
FUJI POWER MOSFET
10
15
5
2
°
°
6V
C
10V
t=
1
10 s
100 s
1ms
DC
20V
10
µ
20
6
s
µ
3
µ