GVD1401-001 Sprague-Goodman Electronics, Inc., GVD1401-001 Datasheet - Page 2

• Manufacturer Part Number: GVD1401-001
• Description: Varactor Diodes
• Manufacturer: Sprague-Goodman Electronics, Inc.

2
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: [phone] • FAX: [phone] • E-MAIL: info@ spraguegoodman.com
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
C
0.021 ± 0.003
Capacitance
min
100
0.53 ± 0.08
0.016 ± 0.002
0.41 ± 0.04
T
46
0.091 ± 0.008
(pF) at –2 V
2.3 ± 0.2
TYP
Total
1
(SINGLE)
3
max
150
2
68
0.115 ± 0.005
2.93 ± 0.13
TOP VIEW
0.007 ± 0.003
0.18 ± 0.08
(COMMON CATHODE)
1
VARACTOR DIODES
C
0.075 ± 0.005
Capacitance
1.91 ± 0.13
3
T
0.051 ± 0.004
(pF) at –7 V
0.038 ± 0.003
0.96 ± 0.065
1.3 ± 0.1
2
13.0
Total
typ
6.1
0.040 ± 0.007
1.03 ± 0.18
0.079
2.0
0.031
0.037
0.80
0.95
TYP
C
min
Capacitance
0.0047 ± 0.0013
PAD LAYOUT
T
4.2
8.6
0.12 ± 0.033
(pF) at –10 V
TYP
Total
max
10.6
0.035
0.037
0.90
0.95
5.2
TYP
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
Maximum reverse leakage current at –10 V
Device dissipation at 25°C: 250 mW (derated
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
C
(at 25°C): 12 V min
(at 25°C): 0.05 µA DC
linearly to zero at +125°C)
(10 MHz)
T
at –2 V
(pF)
Q min
75
50
500
100
50
10
5
0.5
1
GVD1401-001
GVD1401-001
GVD1404-001
2
REVERSE VOLTAGE
Single
3
(VOLTS)
4 5 6
Model Number
10
GVD1404-001
Common
Cathode
20
—
—
30
SG-950
50