GVD1401-001 Sprague-Goodman Electronics, Inc., GVD1401-001 Datasheet - Page 9

• Manufacturer Part Number: GVD1401-001
• Description: Varactor Diodes
• Manufacturer: Sprague-Goodman Electronics, Inc.

SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: [phone] • FAX: [phone] • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Fits Footprint for SOD-323, SOD-123 and smaller
• High frequency (VHF to 8 GHz)
• Available on carrier and reel
• Available in chip form (add suffix -000)
• Two package styles including lower cost, flat
• Alternate notched termination version available,
* For complete model number, select “Dash No.” from chart below.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
TERMINATIONS (GOLD PLATED)
top version
contact factory for outline drawing
MOUNTING PAD LAYOUT
Capacitance
C
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
T
BOTTOM VIEW
(pF) at 0 V
typical
Total
26.0
14.0
7.0
5.0
3.0
2.0
D TYP
M
K TYP
L
DOT INDICATES
CATHODE END
EPOXY
ENCAPSULANT
EPOXY
ENCAPSULANT
8.75
4.45
2.65
1.75
1.30
0.85
min
SIDE VIEW FOR - 11__
C
SIDE VIEW FOR - 01__
Capacitance
T
(pF) at –4 V
TOP VIEW
Total
A
10.80
max
5.50
3.30
2.20
1.65
1.10
C
B
C
2
1
Dash
- 011
- 111
- 012
- 112
- 013
- 113
- 014
- 114
- 015
- 115
No.
C
1.85
0.85
0.65
0.50
0.40
0.30
min
Capacitance
T
(pF) at –20 V
0.200 0.100 0.035 0.050
0.075 0.050 0.035 0.050
0.062 0.042 0.030 0.050
Total
0.10
0.12
5.08
2.5
3.0
1.9
1.6
A
APPLICATIONS
• PCS
• GSM
• Cellular
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
Maximum reverse leakage current at –20 V
Device dissipation at 25°C: 250 mW (derated
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
max
0.050 0.035 0.050
0.060 0.035 0.050
(at 25°C): 22 V min
(at 25°C): 0.05 µA DC
linearly to zero at +125°C)
2.50
1.30
0.90
0.70
0.55
0.45
2.54
1.3
1.5
1.3
1.1
B
0.89
0.89
0.89
0.89
0.76
C
1
1.3
1.3
1.3
1.3
1.3
C
(50 MHz)
2
at –4 V
• WANS
• TAGS
Q min
1000
1200
400
600
700
850
0.015 ± 0.004
0.020 ± 0.005
0.020 ± 0.005
0.015 ± 0.004
0.011 ± 0.003
0.28 ± 0.08
0.38 ± 0.1
0.51 ± 0.1
0.51 ± 0.1
0.38 ± 0.1
D
• AMPS
• DECT
GVD92101 – _ _ _
GVD92102 – _ _ _
GVD92103 – _ _ _
GVD92104 – _ _ _
GVD92105 – _ _ _
GVD92106 – _ _ _
0.030 0.070 0.112
0.030 0.080 0.132
0.030 0.120 0.212
0.030 0.070 0.087
0.020 0.060 0.072
0.76
0.76
0.76
0.76
0.51
K
Number*
Model
3.05
1.8
2.0
1.8
1.5
L
SG-950
2.84
3.35
5.38
2.2
1.8
M
9