OM6009SA International Rectifier Corp., OM6009SA Datasheet - Page 2

• Manufacturer Part Number: OM6009SA
• Description: 100v Thru 500v, Up To 22 Amp, N-channel Mosfet In Hermetic Metal Package, With Optional Zener Gate Clamp Protection
• Manufacturer: International Rectifier Corp.

ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6009SA / OM6109SA
Parameter
BV
V
I
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
T
t
T
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
1 Pulse Test: Pulse Width 300msec, Duty Cycle
GSSF
GSSR
GSS
DSS
D(on)
r
f
S
SM
rr
fs
GS(th)
DS(on)
d(on)
d(off)
SD
DS(on)
DS(on)
iss
oss
rss
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6109)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
10.0
100
2.0
22
1.275 1.425
1275
.085 .095
.130 .155
550
160
200
0.1
0.2
16
19
42
24
2%.
± 500 nA
- 108
-100
0.25
- 2.5
100
- 27
T
4.0
1.0
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
)
(W
(MOSFET) switching times are
essentially independent of
operating temperature.
V
I
V
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
1 Pulse Test: Pulse Width 300msec, Duty Cycle
D
GS
DS
GS
GS
GS
DS
DS
C
DS
GS
GS
GS
C
DS
GS
DS
DD
C
J
g
F
= 250 mA
= 150 C,I
/ds = 100 A/ms
= 125° C
= 125 C
= 5 W , V
= 25 C, I
= 0,
= V
= 20 V
= - 20 V
= ± 12.8 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 30 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
GS
S
F
D
D
D
D
= 250 mA
, V
, I
= -24 A, V
= I
= 10 V
= 15 A
= 15 A
= 15 A,
= 5 A
D
GS
G
S
= 15 A
,
= 10 V
GS
= 0
GS
GS
D
S
= 0,
= 0
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6010SA / OM6110SA
Parameter
BV
V
I
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
T
t
T
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
GSSF
GSSR
GSS
DSS
D(on)
r
f
S
SM
rr
fs
d(on)
d(off)
GS(th)
DS(on)
DS(on)
DS(on)
iss
oss
rss
SD
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6110)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
2%.
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
200
2.0
6.0
18
1000
0.14 0.18
0.28 0.36
250
100
350
0.1
0.2
1.4
17
52
36
30
± 500 nA
- 100
0.25
- 18
- 72
T
100
4.0
1.0
1.8
- 2
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
)
(W
V
I
V
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
D
C
C
C
J
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
g
F
= 250 mA
= 150 C,I
/ds = 100 A/ms
= 125° C
= 125 C
= 5 W , V
= 25 C, I
= 0,
= V
= 20 V
= - 20 V
= ± 12.8 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 75 V, I
2 V
2 V
GS ,
DS(on)
DS(on)
I
D
GS
S
F
= 250 mA
D
D
D
D
, V
, I
= -18 A, V
= 10 V
= I
= 10 A
= 10 A
= 10 A,
@ 18 A
D
GS
= 10 A
S
,
= 10 V
G
GS
= 0
GS
GS
= 0,
= 0
D
S