OM6009SA International Rectifier Corp., OM6009SA Datasheet - Page 3

• Manufacturer Part Number: OM6009SA
• Description: 100v Thru 500v, Up To 22 Amp, N-channel Mosfet In Hermetic Metal Package, With Optional Zener Gate Clamp Protection
• Manufacturer: International Rectifier Corp.

ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6011SA / OM6111SA
Parameter
BV
V
I
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
T
t
T
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
1 Pulse Test: Pulse Width 300msec, Duty Cycle
GSSF
GSSR
GSS
DSS
D(on)
r
f
S
SM
rr
fs
d(on)
d(off)
GS(th)
DS(on)
DS(on)
DS(on)
iss
oss
rss
SD
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6111)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
400
2.0
4.0
10
1150
2.35 2.75
0.47 0.55
0.93 1.10
165
530
0.1
0.2
70
17
12
45
30
2%.
± 500 nA
-100
0.25
100
- 10
- 40
T
4.0
1.0
- 2
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
)
(W
V
I
V
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
1 Pulse Test: Pulse Width 300msec, Duty Cycle
D
C
C
C
J
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
g
F
= 250 mA
= 150 C,I
/ds = 100 A/ms
= 125° C
= 125 C
= 25 C, I
= 5 W , V
= 0,
= V
= 20 V
= - 20 V
= ± 12.8 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 175 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
GS
S
F
D
D
D
= 250 mA
, V
, I
= -10 A, V
D
= 10 V
= I
= 5 A
= 5 A
= 5 A,
D
@ 5 A
GS
S
= 5 A
,
G
GS
= 10 V
= 0
GS
GS
= 0,
D
S
= 0
ELECTRICAL CHARACTERISTICS:
Parameter
BV
V
I
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
T
t
T
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
GSSF
GSSR
GSS
DSS
D(on)
r
f
S
SM
rr
fs
d(on)
d(off)
GS(th)
DS(on)
DS(on)
DS(on)
iss
oss
rss
SD
DSS
STATIC P/N OM6012SA / OM6112SA
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6112)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
2%.
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
500
2.0
8.0
4.0
1275
1.50 1.65
200
700
0.1
0.2
3.2
0.8
85
17
42
14
5
± 500 nA
- 100
0.25
0.85
- 32
T
100
4.0
1.0
3.4
- 8
- 2
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
)
(W
V
I
V
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
D
GS
DS
GS
GS
GS
DS
DS
C
DS
GS
GS
GS
C
DS
GS
DS
DD
C
J
g
F
= 250 mA
= 150 C,I
/ds = 100 A/ms
= 125° C
= 125 C
= 25 C, I
= 5 W , V
= V
= Max. Rat., V
= 0.8 Max. Rat., V
= 25 V
= 200 V, I
= 0,
= 20 V
= - 20 V
= ± 12.8 V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
2 V
2 V
GS ,
DS(on)
DS(on)
I
D
GS
S
F
= 250 mA
D
D
D
, V
, I
= -18 A, V
D
= I
= 4 A
= 4 A
= 4 A,
= 10 V
D
= 4 A
GS
S
= 4 A
,
G
= 10 V
GS
= 0
GS
GS
= 0,
S
= 0
D