MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 25
MBM30LV0128
Manufacturer Part Number
MBM30LV0128
Description
Flash Memory 128 M 16 M X 8 Bit Nand-type
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MBM30LV0128.pdf
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Note : The CE can be “H or L” after the third address input and during busy state. But, for the sequential read
Note : The CE can be “H or L” after the third address input and during busy state. But, for the sequential read
CLE
ALE
I/O0
to I/O7
CLE
ALE
I/O0
to I/O7
R/B
R/B
WE
WE
CE
RE
CE
RE
operation, CE must stay “L” after RE toggling for final column address data read and during busy state.
operation, CE must stay “L” after RE toggling for final column address data read and during busy state.
** SE
** SE
00h
01h
GND input D
V
CC
GND input D
V
CC
input D
Figure 18 Sequential Read (1) Timing Diagram
input D
Figure 19 Sequential Read (2) Timing Diagram
Address
Column
Address
Column
A
A
A
0
N
OUT
A
0
N
7
to
OUT
7
to
OUT
OUT
511
A
A
527
A
9
A
Address
16
9
511
16
Address
to
527
Page
to
Page
M
M
A
A
A
17
A
17
23
23
Page M
to
Access
t
to
Page M
R
Access
t
R
256
N
N
N
N
256
1
1
N
N
256
2
2
Page M
**
**
Access
t
t
R
R
MBM30LV0128
1
0
0
1
1
2
2
VI
V
IH
H
or V
or V
**
**
IL
IL
25
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