MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 26
MBM30LV0128
Manufacturer Part Number
MBM30LV0128
Description
Flash Memory 128 M 16 M X 8 Bit Nand-type
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MBM30LV0128.pdf
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MBM30LV0128
Note : The CE can be “H or L” after the third address input and during busy state. But, for the sequential read
CLE
ALE
I/O0
to I/O7
R/B
WE
CE
RE
operation, CE must stay “L” after RE toggling for final column address data read and during busy state.
** SE
50h
GND input D
Do not input V
Figure 20 Sequential Read Cycle (3) Timing Diagram
Address
Column
A
OUT
CC
A
N
0
7
to
527
A
A
9
Address
16
to
Page
M
A
A
17
23
Page M
Access
to
t
R
512
N
N
512
1
N
512
2
Page M
**
Access
t
R
1
512 513 514
V
IH
**
or V
IL
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