NP100P06PLG Renesas Electronics Corporation., NP100P06PLG Datasheet

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NP100P06PLG

Manufacturer Part Number
NP100P06PLG
Description
Mos Field Effect Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
NP100P06PLG-E1
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TI
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<R>
Document No. D18695EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
DESCRIPTION
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Super low on-state resistance
• High current rating: I
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
NP100P06PLG-E1-AY
NP100P06PLG-E2-AY
R
R
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DS(on)1
DS(on)2
PART NUMBER
2. Starting T
= 6.0 mΩ MAX. (V
= 7.8 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
Note
Note
D(DC)
= 25°C, V
= 25°C)
Note2
Note2
DS
C
A
GS
= m100 A
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= −10 V, I
= −4.5 V, I
DD
LEAD PLATING
= −30 V, R
Pure Sn (Tin)
P-CHANNEL POWER MOSFET
The mark <R> shows major revised points.
D
D
= −50 A)
= −50 A)
A
R
R
V
I
I
P
P
T
T
I
E
= 25°C)
V
G
D(DC)
D(pulse)
AS
DATA SHEET
th(ch-C)
th(ch-A)
ch
stg
DSS
GSS
T1
T2
AS
= 25 Ω, V
SWITCHING
GS
MOS FIELD EFFECT TRANSISTOR
0.75
83.3
= −20 → 0 V
−55 to +175
Tape 800 p/reel
m100
m300
PACKING
−60
m20
200
175
420
1.8
64
°C/W
°C/W
NP100P06PLG
mJ
°C
°C
W
W
V
V
A
A
A
TO-263 (MP-25ZP)
PACKAGE
(TO-263)
2007

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NP100P06PLG Summary of contents

Page 1

... DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION <R> PART NUMBER Note NP100P06PLG-E1-AY Note NP100P06PLG-E2-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance R = 6.0 mΩ MAX − ...

Page 2

... μ Q di/dt = −100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ τ μ Duty Cycle ≤ 1% Data Sheet D18695EJ3V0DS NP100P06PLG MIN. TYP. MAX. UNIT μ −10 A μ A m10 −1.0 −1.6 −2 4.4 6.0 mΩ 5.0 7.8 mΩ 15000 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 240 200 160 120 -100 R = 83.3°C/Wi th(ch- 0.75°C/Wi th(ch-C) 100 Pulse Width - s Data Sheet D18695EJ3V0DS NP100P06PLG 50 75 100 125 150 175 200 - Case Temperature - ° Single Pulse 100 1000 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed Pulsed 0 -1000 0 V Data Sheet D18695EJ3V0DS NP100P06PLG = −55° −25°C 25°C 75°C 125°C 150°C 175° Gate to Source Voltage - V = −55°C ch −25°C 25° ...

Page 5

... Q G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = −100 A/μ 1.5 -0 Diode Forward Current - A F Data Sheet D18695EJ3V0DS NP100P06PLG C iss C oss C rss -1 -10 -100 -12 = −48 V -10 −30 V − −100 A I ...

Page 6

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D18695EJ3V0DS NP100P06PLG ...

Page 7

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP100P06PLG Not all M8E 02. 11-1 ...

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