NP100P06PLG Renesas Electronics Corporation., NP100P06PLG Datasheet
NP100P06PLG
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NP100P06PLG Summary of contents
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... DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION <R> PART NUMBER Note NP100P06PLG-E1-AY Note NP100P06PLG-E2-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance R = 6.0 mΩ MAX − ...
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... μ Q di/dt = −100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ τ μ Duty Cycle ≤ 1% Data Sheet D18695EJ3V0DS NP100P06PLG MIN. TYP. MAX. UNIT μ −10 A μ A m10 −1.0 −1.6 −2 4.4 6.0 mΩ 5.0 7.8 mΩ 15000 ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 240 200 160 120 -100 R = 83.3°C/Wi th(ch- 0.75°C/Wi th(ch-C) 100 Pulse Width - s Data Sheet D18695EJ3V0DS NP100P06PLG 50 75 100 125 150 175 200 - Case Temperature - ° Single Pulse 100 1000 3 ...
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... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed Pulsed 0 -1000 0 V Data Sheet D18695EJ3V0DS NP100P06PLG = −55° −25°C 25°C 75°C 125°C 150°C 175° Gate to Source Voltage - V = −55°C ch −25°C 25° ...
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... Q G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = −100 A/μ 1.5 -0 Diode Forward Current - A F Data Sheet D18695EJ3V0DS NP100P06PLG C iss C oss C rss -1 -10 -100 -12 = −48 V -10 −30 V − −100 A I ...
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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D18695EJ3V0DS NP100P06PLG ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP100P06PLG Not all M8E 02. 11-1 ...