NP100P06PLG Renesas Electronics Corporation., NP100P06PLG Datasheet - Page 6

• Manufacturer Part Number: NP100P06PLG
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
6
Gate
No plating
Gate
Protection
Diode
0.75 ±0.2
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Source
Drain
10.0 ±0.3
7.88 MIN.
1
2
2.54
0.5
4
Body
Diode
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4.45 ±0.2
0.25
1.3 ±0.2
0.025
to 0.25
Data Sheet D18695EJ3V0DS
NP100P06PLG