APT33N90JCCU3 Microsemi Corporation, APT33N90JCCU3 Datasheet - Page 2

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APT33N90JCCU3

Manufacturer Part Number
APT33N90JCCU3
Description
Isotop Buck Chopper Super Junction Mosfet Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Dynamic Characteristics
SiC chopper diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
V
T
T
I
I
C
C
Q
E
E
I
DS(on)
Q
E
E
V
Q
GS(th)
Q
DSS
GSS
T
d(off)
T
d(on)
RRM
RM
I
C
oss
off
off
iss
on
on
F
gs
gd
r
f
F
C
g
Input Capacitance
Output Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
All ratings @ T
Test Conditions
V
f = 1MHz
V
V
I
Inductive Switching (125°C)
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
j
Test Conditions
V
V
V
V
V
D
D
D
D
www.microsemi.com
= 25°C unless otherwise specified
G
GS
GS
Bus
GS
Bus
GS
GS
GS
GS
GS
GS
GS
= 26A
= 26A
= 26A ; R
= 26A ; R
= 7.5Ω
= 0V ; V
= 10V
= 10V
= 10V ; V
= 10V ; V
= 0V,V
= 0V,V
= 400V
= 600V
= 10V, I
= V
= ±20 V, V
Test Conditions
V
I
I
di/dt =500A/µs
f = 1MHz, V
f = 1MHz, V
F
F
R
= 10A
= 10A, V
=1200V
DS
, I
DS
DS
G
G
D
DS
D
= 900V
= 900V
= 7.5Ω
= 7.5Ω
Bus
Bus
= 3mA
= 26A
= 100V
DS
R
= 600V
= 600V
R
R
= 600V
= 0V
= 200V
= 400V
T
T
T
Tc = 100°C
T
T
T
j
j
j
APT33N90JCCU3
j
j
j
= 25°C
= 25°C
= 175°C
= 175°C
= 25°C
= 125°C
Min
1200
Min
Min
2.5
0.33
0.75
0.85
Typ
270
115
400
0.9
1.3
Typ
6.8
70
20
25
Typ
500
100
32
1.6
2.3
32
56
10
40
96
69
3
1000
Max
Max
Max
200
100
120
100
1.8
3.5
3
Unit
Unit
Unit
µA
nC
µA
nC
mJ
mJ
pF
nA
nF
ns
V
A
V
V
2 – 5

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