APT33N90JCCU3 Microsemi Corporation, APT33N90JCCU3 Datasheet - Page 3

• Manufacturer Part Number: APT33N90JCCU3
• Description: Isotop Buck Chopper Super Junction Mosfet Sic Chopper Diode
• Manufacturer: Microsemi Corporation

Thermal and package characteristics
Symbol Characteristic
T
SOT-227 (ISOTOP
Typical CoolMOS performance Curve
Torque
V
R
R
J
,T
Wt
T
ISOL
thJC
thJA
L
STG
r = 4.0 (.157)
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
Package Weight
(2 places)
®
) Package Outline
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
250
200
150
100
50
2
2
1
1
0
Operating Frequency vs Drain Current
0
5
10
switching
Switching Energy vs Current
31.5 (1.240)
31.7 (1.248)
V
R
T
L=100µH
14.9 (.587)
15.1 (.594)
Hard
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
ZCS
DS
J
G
=125°C
10
=7.5Ω
=600V
7.8 (.307)
8.2 (.322)
ZVS
I
15
D
I
15
D
, Drain Current (A)
, Drain Current (A)
Dimensions in Millimeters and (Inches)
20
20
25
Eon
30
V
D=50%
R
T
T
25
DS
J
C
G
www.microsemi.com
=125°C
=75°C
=7.5Ω
=600V
35
Eoff
3.3 (.129)
3.6 (.143)
40
30
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
4.0 (.157)
4.2 (.165)
(2 places)
(4 places)
Source
Anode
3
2
1
0
5
3.0
2.5
2.0
1.5
1.0
0.5
Switching Energy vs Gate Resistance
Eon
25
SiC Diode
10
ON resistance vs Temperature
APT33N90JCCU3
CoolMOS
Gate Resistance (Ohms)
T
1.95 (.077)
2.14 (.084)
J
, Junction Temperature (°C)
50
15
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
75
0.75 (.030)
0.85 (.033)
20
Eoff
Drain
100
Gate
Hex Nut M4
*
25
2500
Min
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
-40
V
I
T
L=100µH
D
DS
J
=26A
=125°C
=600V
125
30
12.6 (.496)
12.8 (.504)
150
29.2
Typ
35
Max
0.43
1.65
25.2 (0.992)
25.4 (1.000)
150
300
1.5
20
°C/W
Unit
N.m
°C
V
g
3 – 5