APT30GF60JCU2 Microsemi Corporation, APT30GF60JCU2 Datasheet

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APT30GF60JCU2

Manufacturer Part Number
APT30GF60JCU2
Description
Isotop Boost Chopper Npt Igbt Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
ISOTOP
SiC chopper diode
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
G
APT0502 on www.microsemi.com
G
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
ISOTOP
NPT IGBT
E
®
Boost chopper
®
C
K
E
Parameter
K
C
www.microsemi.com
Application
Features
Benefits
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Non Punch Through (NPT) Fast IGBT
Chopper SiC Schottky Diode
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
-
-
-
-
-
-
-
-
-
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Low leakage current
RBSOA and SCSOA rated
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 90°C
= 25°C
= 25°C
®
APT30GF60JCU2
Package (SOT-227)
V
I
C
CES
= 30A @ Tc = 90°C
= 600V
Max ratings
60A@500V
±20
600
100
154
45
30
C
of V
CEsat
Unit
W
V
A
V
1 – 6

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APT30GF60JCU2 Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT30GF60JCU2 V I Application • AC and DC motor control • Switched Mode Power Supplies • ...

Page 2

... Chopper SiC diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APT30GF60JCU2 Test Conditions Min T = 25° 600V T = 125° 25°C 1.7 V ...

Page 3

... V , Collector to Emitter Voltage (V) CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APT30GF60JCU2 IGBT SiC chopper Diode 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) W=4.1 (.161) 7.8 (.307) W=4.3 (.169) 8.2 (.322) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 0.75 (.030) 4.2 (.165) 0.85 (.033) (2 places) 3.3 (.129) 1.95 (.077) 3 ...

Page 4

... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. 100 T , Junction Temperature (°C) J APT30GF60JCU2 Output Characteristics (V 50 250µs Pulse Test < 0.5% Duty cycle 37 12 Collector to Emitter Voltage ( 30A 25°C J ...

Page 5

... Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 0.5 Eon, 30A V = 400V 0. 15V 125° Gate Resistance (Ohms) www.microsemi.com APT30GF60JCU2 Turn-Off Delay Time vs Collector Current 125 100 V =15V =125° =15V =25° 400V 6.8Ω ...

Page 6

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT30GF60JCU2 Single Pulse 0.001 ...

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