APT30GF60JCU2 Microsemi Corporation, APT30GF60JCU2 Datasheet - Page 5

• Manufacturer Part Number: APT30GF60JCU2
• Description: Isotop Boost Chopper Npt Igbt Sic Chopper Diode
• Manufacturer: Microsemi Corporation

50
40
30
20
10
50
40
30
20
10
0.375
0.125
0
0.25
Switching Energy Losses vs Gate Resistance
0.75
0.25
0.5
0.5
0
0
Turn-On Energy Loss vs Collector Current
0
1
0
Turn-On Delay Time vs Collector Current
Current Rise Time vs Collector Current
0
0
I
V
R
CE
I
10
CE
G
10
CE
V
, Collector to Emitter Current (A)
R
= 6.8Ω
I
CE
CE
= 400V
, Collector to Emitter Current (A)
G
10
= 400V
= 6.8Ω
, Collector to Emitter Current (A)
T
V
J
GE
=125°C
5
Gate Resistance (Ohms)
20
20
=15V,
20
Eoff, 30A
V
GE
30
30
= 15V
10
T
V
30
J
=125°C,
GE
Eon, 30A
=15V
40
40
40
15
Tj = 125°C
V
R
CE
G
50
50
50
= 6.8Ω
V
V
T
= 400V
CE
GE
J
= 125°C
20
= 400V
= 15V
60
60
60
70
25
70
70
www.microsemi.com
125
100
1.5
0.5
50
40
30
20
10
70
60
50
40
30
20
10
75
50
25
0
0
2
1
0
Turn-Off Energy Loss vs Collector Current
0
0
0
0
Turn-Off Delay Time vs Collector Current
V
V
R
Current Fall Time vs Collector Current
I
Reverse Bias Safe Operating Area
V
CE
CE
GE
G
V
R
I
I
CE
CE
CE
G
10
= 6.8Ω
APT30GF60JCU2
CE
10
, Collector to Emitter Current (A)
10
100
= 400V
= 15V
V
T
= 6.8Ω
, Collector to Emitter Voltage (V)
, Collector to Emitter Current (A)
GE
= 400V
, Collector to Emitter Current (A)
J
=25°C
V
=15V,
CE
20
20
= 400V, V
20
T
200
J
= 125°C
30
30
30
300
GE
T
J
= 15V, R
= 125°C
T
40
40
40
J
= 25°C
400
V
T
J
G
GE
=125°C
50
50
50
= 6.8Ω
=15V,
500
60
60
60
600
70
70
70
5 – 6