APTM120VDA57T3G Microsemi Corporation, APTM120VDA57T3G Datasheet - Page 2

• Manufacturer Part Number: APTM120VDA57T3G
• Description: Dual Boost Chopper Mosfet Power Module
• Manufacturer: Microsemi Corporation

Dynamic Characteristics
Chopper diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
V
T
T
I
I
C
C
C
Q
E
E
I
DS(on)
Q
E
E
V
Q
GS(th)
Q
DSS
GSS
d(off)
T
d(on)
T
RRM
t
RM
I
oss
off
off
rr
iss
rss
on
on
F
gd
gs
F
rr
g
r
f
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
All ratings @ T
j
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive switching @ 125°C
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
Test Conditions
V
V
V
V
V
www.microsemi.com
D
D
D
D
= 25°C unless otherwise specified
GS
GS
G
GS
DS
GS
Bus
GS
Bus
GS
GS
GS
GS
GS
= 17A
= 17A
= 17A, R
= 17A, R
= 5Ω
= 0V,V
= 0V,V
= 10V, I
= V
= ±30 V, V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 600V
= 800V
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
F
F
F
F
R
R
= 30A
= 60A
= 30A
= 30A
=1200V
DS
= 800V
, I
DS
DS
G
G
D
D
= 5Ω
= 5Ω
= 1200V
= 1000V
Bus
Bus
= 2.5mA
= 8.5A
DS
= 800V
= 800V
= 0V
APTM120VDA57T3G
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
T
T
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
j
j
= 125°C
= 25°C
1200
Min
Min
Min
3
1700
5155
1565
Typ
300
380
360
Typ
770
130
187
120
990
685
857
Typ
570
160
2.6
3.2
1.8
30
45
24
20
15
±100
Max
1000
Max
Max
100
500
250
684
3.1
5
Unit
Unit
Unit
mΩ
µA
nC
µA
nA
nC
pF
ns
ns
µJ
µJ
V
A
V
V
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