APTM120VDA57T3G Microsemi Corporation, APTM120VDA57T3G Datasheet - Page 6

• Manufacturer Part Number: APTM120VDA57T3G
• Description: Dual Boost Chopper Mosfet Power Module
• Manufacturer: Microsemi Corporation

225
200
175
150
125
100
180
160
140
120
100
2.5
1.5
0.5
75
50
25
80
60
40
20
0
0
3
2
1
0
4
5
5
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
V
R
T
L=100µH
DS
J
C
G
J
DS
G
=125°C
=75°C
Switching Energy vs Current
=125°C
J
=5Ω
DS
G
=5Ω
=125°C
=800V
=800V
=5Ω
=800V
10
10
6
Delay Times vs Current
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
ZCS
15
15
8
switching
Hard
10
20
20
E
12
25
25
on
ZVS
E
t
off
d(on)
t
d(off)
30
30
14
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35
35
16
APTM120VDA57T3G
1000
100
80
60
40
20
10
4
3
2
1
0
0
1
0.2 0.4 0.6 0.8
0
5
Source to Drain Diode Forward Voltage
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
D
J
DS
G
J
DS
=17A
=125°C
=125°C
=5Ω
V
Rise and Fall times vs Current
=800V
5
=800V
10
SD
T
, Source to Drain Voltage (V)
J
Gate Resistance (Ohms)
=150°C
10
I
D
, Drain Current (A)
15
E
15
off
20
T
1
J
=25°C
20
1.2 1.4 1.6 1.8
25
t
t
f
r
25
E
off
E
on
30
30
35
35
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