M25PX80 Numonyx, M25PX80 Datasheet - Page 28

• Manufacturer Part Number: M25PX80
• Description: 8-mbit, Dual I/o, 4-kbyte Subsector Erase, Serial Flash Memory With 75 Mhz Spi Bus Interface
• Manufacturer: Numonyx

6.7
28/60
Figure 12. Read Data Bytes (READ) instruction sequence and data-out sequence
1. Address bits A23 to A22 are Don’t care.
Read Data Bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, are shifted out on Serial Data output (DQ1) at a
maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at higher speed (FAST_READ) instruction.
When the highest address is reached, the address counter rolls over to 000000h, allowing
the read sequence to be continued indefinitely.
The Read Data Bytes at higher speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at higher speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
DQ0
DQ1
S
C
0
1
High Impedance
2
Instruction
3
C
, during the falling edge of Serial Clock (C).
4
5
6
7
MSB
23
8
22 21
Figure
9 10
24-bit address
13.
3
28 29 30 31 32 33 34 35
2
1
0
MSB
7
6
5
Data Out 1
4
3
36 37 38
2
1
39
0
Data Out 2
7
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