MMBT6517 Leshan Radio Company Co., Ltd., MMBT6517 Datasheet

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MMBT6517

Manufacturer Part Number
MMBT6517
Description
High Voltage Transistors(NPN Silicon)
Manufacturer
Leshan Radio Company Co., Ltd.
Datasheet

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MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
High Voltage Transistors
NPN Silicon
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Collector Current — Continuous
MMBT6517LT1 = 1Z
Collector–Emitter Breakdown Voltage
(I
Collector–Base Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Collector Cutoff Current
( V
Emitter Cutoff Current
( V
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
A
C
C
E
= 25°C
= 1.0 mAdc )
= 100 Adc )
= 10 Adc )
CB
EB
= 250Vdc )
= 5.0Vdc )
Rating
Characteristic
A
= 25°C
Symbol
V
V
V
I
I
CEO
CBO
EBO
B
C
(T
A
= 25°C unless otherwise noted.)
1
BASE
Value
350
350
250
500
5.0
Symbol
T
Symbol
V
V
V
J
R
R
P
P
, T
I
I
(BR)CEO
(BR)CBO
(BR)EBO
D
D
JA
JA
CBO
EBO
stg
3
COLLECTOR
2
EMITTER
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
–55 to +150
Max
225
300
417
1.8
556
2.4
Min
350
350
6.0
LESHAN RADIO COMPANY, LTD.
mW/°C
mW/°C
°C/W
°C/W
Unit
mW
mW
°C
Max
50
50
MMBT6517LT1
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
CASE 318–08, STYLE 6
1
SOT–23 (TO–236AB)
2
3
M23–1/5

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MMBT6517 Summary of contents

Page 1

... Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, ( 25°C A Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I = 1.0 mAdc ) C Collector–Base Breakdown Voltage (I ...

Page 2

... A Symbol Min CE(sat) — — — — V BE(sat) — — — V — BE(on — — eb MMBT6517LT1 Max Unit — — — 200 200 — Vdc 0.30 0.35 0.50 1.0 Vdc 0.75 0.85 0.90 2.0 Vdc 200 MHz 6 M23–2/5 ...

Page 3

... I Figure 4. Temperature Coefficients 0.5 1.0 2.0 5 REVERSE VOLTAGE (VOLTS) R Figure 5. Capacitance MMBT6517LT1 T = 25° MHz 3.0 5.0 7 100 25°C to 125°C CE(sat) –55°C to 25°C –55°C to 125° ...

Page 4

... CC V ADJUSTED 2 FOR V = 100 V CE(off) 1.0 k 1/2MSD7000 APPROXIMATELY –1.35 V Figure 8. Switching Time Test Circuit Z = r(t) • R qJC( r(t) • R qJA(t) 5 100 t, TIME (ms) Figure 9. Thermal Response MMBT6517LT1 100 V CE(off 5 25°C J 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 7. Turn– ...

Page 5

... FIGURE 1/f t DUTY CYCLE = PEAK PULSE POWER = P Design Note: Use of Transient Thermal Resistance Data LESHAN RADIO COMPANY, LTD. MMBT6517LT1 M23–5/5 ...

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