MMBT6517 Leshan Radio Company Co., Ltd., MMBT6517 Datasheet - Page 3
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MMBT6517
Manufacturer Part Number
MMBT6517
Description
High Voltage Transistors(NPN Silicon)
Manufacturer
Leshan Radio Company Co., Ltd.
Datasheet
1.MMBT6517.pdf
(5 pages)
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200
100
70
50
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
V
CE
= 10 V
2.0
2.0
I
C
I
V
Figure 1. DC Current Gain
V
, COLLECTOR CURRENT (mA)
C
3.0
V
3.0
CE(sat)
BE(sat)
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
BE(on)
T
@ I
J
@ I
5.0 7.0
= 25°C
@ V
5.0 7.0
T
C
C
J
/I
/I
CE
= 125°C
B
B
25°C
–55°C
= 10 V
= 10
= 10
10
10
100
7.0
5.0
3.0
2.0
1.0
70
50
30
20
10
0.2
20
20
V
CE(sat)
30
30
0.5
@ I
V
50
50
C
1.0
R
/I
, REVERSE VOLTAGE (VOLTS)
70 100
B
70 100
Figure 5. Capacitance
= 5.0
2.0
5.0
C
eb
10
–0.5
–1.0
–1.5
–2.0
–2.5
Figure 2. Current–Gain — Bandwidth Product
2.5
2.0
1.5
1.0
0.5
100
70
50
30
20
10
0
1.0
1.0
C
20
cb
R
LESHAN RADIO COMPANY, LTD.
R
VC
Figure 4. Temperature Coefficients
I
VC
for V
T
C
2.0
2.0
for V
50
, COLLECTOR CURRENT (mA)
J
I
= 25°C
C
BE
, COLLECTOR CURRENT (mA)
3.0
3.0
CE(sat)
100
I
I
C
B
5.0 7.0
200
5.0 7.0
= 10
10
10
–55°C to 125°C
–55°C to 25°C
T
V
f = 20 MHz
J
CE
= 25°C
MMBT6517LT1
25°C to 125°C
= 20 V
20
20
30
30
50
50
70 100
70 100
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