VSKT430 Vishay Siliconix, VSKT430 Datasheet - Page 6

• Manufacturer Part Number: VSKT430
• Description: Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

VSK.430..PbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
www.vishay.com
6
www.DataSheet4U.com
10000
1000
Fig. 10 - On-State Voltage Drop Characteristics
100
0.5
Instantaneous On-state Voltage (V)
Device code
1
T = 25 °C
1.5
J
100
0.1
10
0.001
1
VSK.430..PbF Series
Per Junction
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
tr<=1 µs
2
rated di/dt : 20V, 10ohms; tr<=1 µs
<=30% rated di/dt : 10V, 10ohms
For technical questions, contact: [e-mail]
2.5
VGD
1
2
3
4
5
T = 130°C
VSK
J
0.01
1
IGD
3
Thyristor/Diode and Thyristor/Thyristor, 430 A
(SUPER MAGN-A-PAK
-
-
-
-
-
3.5
Fig. 12 - Gate Characteristics
T
2
Module type
Circuit configuration (see end of datasheet)
Current rating
Voltage code x 100 = V
Lead (Pb)-free
Instantaneous Gate Current (A)
0.1
430
VSK.430..PbF Series
3
(b)
(a)
-
1
20
4
Frequency Limited by PG(AV)
RRM
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Fig. 11 - Thermal Impedance Z
TM
0.001
0.01
(see Voltage Ratings table)
PbF
0.1
0.001
Power Modules)
5
10
(1)
VSK.430..PbF Series
Per Junction
Square Wave Pulse Duration (s)
(2)
0.01
(3)
(4)
100
0.1
Steady State Value:
R
(DC Operation)
thJC
1
Document Number: 93748
= 0.065 K/W
thJC
Characteristics
Revision: 12-Aug-08
10
100