VSKT91 Vishay Siliconix, VSKT91 Datasheet - Page 2

• Manufacturer Part Number: VSKT91
• Description: (VSKT71 / VSKT91) Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

VSK.71, .91..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.71/.91
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
(thyristors)
Maximum average forward current
(diodes)
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle
non-repetitive on-state
or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of
rise of turned on current
Maximum holding current
Maximum latching current
www.DataSheet4U.com
I
Average power = V
2
t for time t
2
2
t for fusing
√t for fusing
x
= I
2
√t x √t
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
T(AV)
+ r
REVERSE VOLTAGE
REPETITIVE PEAK
t
V
x (I
RRM
T(RMS)
For technical questions, contact: [e-mail]
, MAXIMUM
1000
1200
1400
1600
400
600
800
V
SYMBOL
)
V
2
I
I
T(TO)
O(RMS)
I
I
2
dI/dt
I
I
T(AV)
F(AV)
r
V
V
√t
TSM
FSM
t
or
I
I
(ADD-A-PAK
I
2
TM
FM
H
L
(2)
t
(1)
(2)
Thyristor/Diode and Thyristor/Thyristor
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
TM
FM
TM
C
J
J
J
J
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
= 85 °C
= π x I
= π x I
= π x I
NON-REPETITIVE PEAK
REVERSE VOLTAGE
J
maximum
V
T(AV)
F(AV)
RSM
T(AV)
(3)
(3)
(4)
(4)
TM
, MAXIMUM
1100
1300
1500
1700
, I
500
700
900
(3)
(4)
Generation 5 Power Modules),
TEST CONDITIONS
V
g
No voltage
reapplied
100 % V
reapplied
T
no voltage reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
T
I
= 500 mA, t
(RMS)
J
J
J
J
J
16.7 % x π x I
I > π x I
= 25 °C, no voltage reapplied
= 25 °C
= T
= T
= 25 °C
75/95 A
J
J
or
DRM
maximum
maximum
RRM
RRM
AV
,
r
< 0.5 µs, t
AV
< I < π x I
PEAK OFF-STATE VOLTAGE,
Sinusoidal
half wave,
initial T
T
Initial T
T
V
J
J
DRM
maximum
maximum
GATE OPEN CIRCUIT
I
(RMS)
p
, MAXIMUM REPETITIVE
> 6 µs
J
J
=
=
AV
1000
1200
1400
1600
400
600
800
V
VSK.71 VSK.91 UNITS
13.86
12.56
17.11
15.60
138.6
Document Number: 94421
1665
1740
1400
1470
1850
1940
9.80
8.96
0.82
0.85
3.00
2.90
1.59
165
75
150
250
400
Revision: 24-Apr-08
15.91
14.52
11.25
10.27
20.00
18.30
159.1
1785
1870
1500
1570
2000
2100
0.80
0.85
2.40
2.25
1.58
210
95
AT 125 °C
I
I
RRM,
mA
DRM
kA
15
kA
A/µs
mΩ
mA
A
V
V
2
2
√s
s