VSKTF200 Vishay Siliconix, VSKTF200 Datasheet - Page 7

• Manufacturer Part Number: VSKTF200
• Description: Fast Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

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ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94422
Revision: 03-Jun-08
1E4
1E3
1E2
1E1
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tp
Device code
VSK.F200.. S eries
S inusoidal pulse
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK
1E2
Pulse Basewidth (µs)
0.05
0.1
0.25
100
0.1
10
0.5
1
0.01
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
VGD
4
1
2
3
5
6
7
8
VSK
2.5
<=30% rated di/ dt : 10V, 20ohms
rated di/ dt : 10V, 10ohms
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
1
For technical questions, contact: [e-mail]
1E3
5
IGD
10 joules per pulse
-
-
-
-
-
-
-
-
TM
T
2
Module type
Circuit configuration
Fast SCR
Current rating: I
Voltage code x 100 = V
dV/dt code: H ≤ 400 V/µs
t
Lead (Pb)-free
Power Modules), 200 A
q
code: K ≤ 20 µs
0.1
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Fig. 15 - Gate Characteristics
1E4
(b)
F
3
Instantaneous Gate Current (A)
J ≤ 25 µs
VSK.F200.. Series
200
4
(a)
T(AV)
1
x 10 rounded
-
RRM
E1
Frequenc y Limited by PG(AV)
(see Voltage Ratings table)
1E 1
12
5
(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms
tp
(1)
10
Vishay High Power Products
H
6
VSK.F200.. S eries
T rapezoidal pulse
d i/ dt 50A/ µs
0.05
1E2
(2)
0.1
Pulse Basewidth (µs)
VSK.F200..P Series
K
7
0.25
(3)
0.5
(4)
1
100
P
8
2.5
5
1E3
10 joules per pulse
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