SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet - Page 7

• Manufacturer Part Number: SPB80N03
• Description: SIPMOS Power Transistor
• Manufacturer: Siemens Semiconductor Group

Typ. capacitances
C = f (V
parameter: V
Drain-source on-resistance
R
parameter : I
Semiconductor Group
DS(on)
0.015
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
9500
7500
6500
5500
4500
3500
2500
1500
pF
500
-60
0
DS
SPP80N03
= f ( T
)
5
-20
D
GS
j
)
= 80 A, V
10
= 0 V, f = 1 MHz
20
98%
15
typ
60
20
GS
100
= 10 V
25
30
140 °C
V
V
T
Ciss
Coss
Crss
j
DS
200
40
7
Forward characteristics of reverse diode
I
parameter: T
Gate threshold voltage
V
parameter : V
F
GS(th)
= f ( V
10
10
10
10
5.0
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
V
0.0
3
2
1
0
-60
SD
SPP80N03
= f ( T
)
0.4
-20
j
j
)
, t
GS
0.8
p
= V
20
= 80 µs
1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
, I
1.6
D
= 240 µA
100
2.0
SPP80N03
140 °C
2.4
V
T
V
j
SD
max
typ
min
3.0
200