SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet - Page 8

• Manufacturer Part Number: SPB80N03
• Description: SIPMOS Power Transistor
• Manufacturer: Siemens Semiconductor Group

Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
Semiconductor Group
(BR)DSS
GS
mJ
700
600
550
500
450
400
350
300
250
200
150
100
V
= 25
50
37
35
34
33
32
31
30
29
28
27
0
-60
20
SPP80N03
= f ( T
40
-20
D
= 80 A, V
60
j
)
20
80
AS
60
100
DD
= f ( T
= 25 V
120
100
j
)
140
140 °C
°C
T
T
j
j
180
200
8
Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
SPP80N03
Gate
20
D puls
)
40
0,2
V
= 80 A
DS max
60
80
100
SPP80N03
120 140
0,8
V
DS max
nC
Q
Gate
170