CM25MD-24H Mitsubishi Electric Semiconductor, CM25MD-24H Datasheet - Page 3

• Manufacturer Part Number: CM25MD-24H
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

BRAKE PART
Note 1. I
ELECTRICAL CHARACTERISTICS
INVERTER PART
CONVERTER PART
I
V
I
V
C
C
C
Q
t
t
t
t
V
t
Q
R
R
I
V
I
V
C
C
C
Q
V
R
R
I
V
R
CES
GES
CES
GES
d (on)
r
d (off)
f
rr (Note. 1)
RRM
th(j-f)
th(j-f)
Symbol
th(j-f)
th(j-f)
Symbol
EC (Note. 1)
FM
Symbol
th(j-f) (Note. 5)
GE(th)
CE(sat)
GE(th)
CE(sat)
ies
oes
res
ies
oes
res
G
FM
G
rr (Note. 1)
Q
Q
R
R
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
(Note. 5)
(Note. 5)
(Note. 5)
(Note. 5)
E
, V
•
•
The conductive greese applied, between module and fin.
Al plate is used as fin.
EC
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-to-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Repetitive reverse current
Forward voltage drop
Thermal resistance
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Parameter
Parameter
Parameter
j
) should not increase beyond 150 C.
(T
j
= 25 C)
V
V
T
T
V
I
IGBT part
Clamp diode part
V
I
V
T
T
V
V
V
V
V
R
Resistive load
I
I
di
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
I
V
V
V
I
Per 1/6 module
C
E
E
C
F
F
j
j
CE
GE
j
j
CC
CE
GE
CE
GE
CC
CC
GE1
G
CE
GE
R
e
= 25 C
= 150 C
= 25A, Clamp diode part
= 25 C
= 150 C
= 25A, V
= 25A, V
= 2.5mA, V
= 25A
= 2.5mA, V
/ dt = – 50A / s
= V
= 13
= V
= V
= V
= 10V
= 600V, I
= V
= 10V
= 0V
= 600V, I
= 600V, I
= 0V
= V
RRM
CES
CES
GES
GES
GE2
, T
GE
GE
, V
, V
, V
, V
= 15V
C
j
C
C
CE
CE
= 0V
= 0V
GE
GE
CE
= 150 C
CE
= 25A, V
= 25A, V
= 25A
I
I
= 10V
= 10V
C
C
= 0V
= 0V
= 0V
= 0V
= 25A, V
= 25A, V
Test conditions
Condition
Condition
GE
GE
= 15V
= 15V
GE
GE
= 15V
= 15V
j
) does not exceed T
(Note. 4)
(Note. 4)
MEDIUM POWER SWITCHING USE
jmax
MITSUBISHI IGBT MODULES
rating.
Min.
Min.
Min.
4.5
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM25MD-24H
Limits
Limits
Limits
Typ.
Typ.
Typ.
2.45
0.22
2.45
125
—
—
—
—
—
125
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.7
INSULATED TYPE
2.7
6
6
Max.
Max.
Max.
100
200
150
350
250
—
—
7.5
—
—
—
7.5
0.5
3.4
5.0
3.8
1.0
1.5
1.2
1.7
0.5
3.4
5.0
3.8
1.0
3.5
1.2
1.9
1.5
1.7
1
1
8
Feb.1999
Unit
Unit
C/W
C/W
Unit
mA
C/W
C/W
mA
nC
nC
mA
C/W
nF
nF
nF
nF
nF
nF
ns
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A
C