1N5059AMO Philips Semiconductors (Acquired by NXP), 1N5059AMO Datasheet - Page 2
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1N5059AMO
Manufacturer Part Number
1N5059AMO
Description
1N5059 to 1N5062; Controlled Avalanche Rectifiers;; Package: SOD57
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.1N5059AMO.pdf
(7 pages)
Philips Semiconductors
FEATURES
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1996 Jun 19
V
V
V
I
I
E
T
T
SYMBOL
F(AV)
FSM
stg
j
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
RRM
RWM
R
RSM
Controlled avalanche rectifiers
repetitive peak reverse voltage
crest working reverse voltage
continuous reverse voltage
average forward current
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
1N5059
1N5060
1N5061
1N5062
1N5059
1N5060
1N5061
1N5062
1N5059
1N5060
1N5061
1N5062
PARAMETER
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
2/3 page (Datasheet)
k
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
L = 120 mH; T
surge; inductive load switched off
see Fig.5
T
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
t = 10 ms half sinewave
tp
amb
Fig.1 Simplified outline (SOD57) and symbol.
= 45 C;
2
= 80 C; PCB mounting
CONDITIONS
j
= T
j max
prior to
a
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
1N5059 to 1N5062
MAM047
MIN.
65
65
Product specification
+175
+175
MAX.
200
400
600
800
200
400
600
800
200
400
600
800
50
20
2.0
0.8
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
mJ
C
C
UNIT