ESH1PD Vishay Intertechnology, ESH1PD Datasheet - Page 3

• Manufacturer Part Number: ESH1PD
• Description: Vishay General Semiconductor
• Manufacturer: Vishay Intertechnology

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88895
Revision: 25-Jun-07
1000
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
100
0.01
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
10
T
j
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
20
0.4
T
Instantaneous Forward Voltage (V)
0.074 (1.88)
0.086 (2.18)
j
= 175 °C
30
0.013 (0.35)
0.004 (0.10)
0.6
T
j
40
= 175 °C
T
j
= 25 °C
0.8
T
T
j
50
j
= 125 °C
= 125 °C
T
j
= 150 °C
60
1.0
0.142 (3.61)
0.126 (3.19)
0.012 (0.30)
0.000 (0.00)
0.158 (4.00)
0.146 (3.70)
70
T
j
1.2
= 25 °C
Cathode band
80
1.4
90
100
1.6
0.018 (0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
New Product
DO-220AA (SMP)
0.053 (1.35)
0.041 (1.05)
0.100
(2.54)
ESH1PB, ESH1PC & ESH1PD
1000
1000
100
100
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal impedance
0.103 (2.60)
0.087 (2.20)
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.012 (0.30) REF
(2.67)
0.105
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
(0.635)
0.025
1
0.036 (0.91)
0.024 (0.61)
(0.762)
0.030
0.032 (0.80)
0.016 (0.40)
10
(1.27)
0.050
10
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100
100
3