HVM187 Hitachi Semiconductor (acquired by Renesas), HVM187 Datasheet - Page 2

• Manufacturer Part Number: HVM187
• Description: Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
• Manufacturer: Hitachi Semiconductor (acquired by Renesas)

HVM187S
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Note: Per one device
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Forward resistance
ESD-Capability
Note: Failure criterion; I
2
R
Symbol
V
I
C
r
—
R
f
F
100nA at V
Fig.1 Forward current Vs. Forward voltage
10
10
10
10
10
10
–12
–10
–8
–4
–6
Min
—
—
—
3.5
200
–2
0
R
= 60V
Typ
—
—
—
—
—
0.2
Forward voltage V (V)
Symbol
V
I
Pd*
Tj
Tstg
F
R
0.4
Max
1.0
100
2.4
5.5
—
0.6
Unit
V
nA
pF
V
F
0.8
Value
60
50
100
125
–55 to +125
Test Condition
I
V
V
I
*C = 200pF, Both forward and
reverse direction 1 pulse.
F
F
R
R
= 10mA
= 10mA, f = 100MHz
= 60V
= 0V, f = 1MHz
1.0
Unit
V
mA
mW
C
C