PEMH4 Philips Semiconductors (Acquired by NXP), PEMH4 Datasheet - Page 4

• Manufacturer Part Number: PEMH4
• Description: PEMH4; NPN Resistor Equipped Transistor R1 = 10 KOhm/R2 = Open;; Package: SOT666 (SS-Mini)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
2001 Sep 14
handbook, halfpage
Per transistor
I
I
I
h
V
R1
C
SYMBOL
amb
CBO
CEO
EBO
FE
CEsat
c
NPN resistor-equipped double transistor
R1 = 10 k , R2 = open
V
(1) T
(2) T
(3) T
Fig.3
CE
= 25 C unless otherwise specified.
h FE
600
400
200
= 5 V.
amb
amb
amb
0
10
= 150 C.
= 25 C.
= 40 C.
DC current gain as a function of collector
current; typical values.
1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
1
PARAMETER
(1)
(2)
(3)
10
I C (mA)
MGM902
10
2
I
I
I
I
I
I
I
E
B
B
C
C
C
E
= 0; V
= 0; V
= 0; V
= i
= 0; V
= 1 mA; V
= 5 mA; I
e
= 0; V
CB
CE
CE
EB
4
CONDITIONS
= 50 V
= 50 V
= 30 V; T
= 5 V
B
handbook, halfpage
CE
CB
= 0.25 mA
V CEsat
I
(1) T
(2) T
(3) T
Fig.4
C
= 10 V; f = 1 MHz
= 5 V
/I
(V)
10
B
10
= 20.
amb
amb
amb
1
10
2
j
= 150 C
= 100 C.
= 25 C.
= 40 C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
200
7
MIN.
Preliminary specification
10
10
TYP.
I C (mA)
100
1
50
100
150
13
2.5
MAX.
MGM901
PEMH4
(1)
(2)
(3)
10
2
nA
mV
k
pF
UNIT
A
A
A