2N4014 ST Microelectronics, Inc., 2N4014 Datasheet
2N4014
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2N4014 Summary of contents
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... HIGH-VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case high-voltage, high current switch used for memory applications requiring breakdown voltages and operating cur- rents Fast switching times are assured be- cause of the high minimum fT (300 MHz) and tight control on storage time ...
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... THERMAL DATA R Thermal Resistance Junction-case cas e R Thermal Resistance Junction-ambient t h j-amb ELECTRICAL CHARACTERISITCS(T Symbol Parameter I Collector Cutoff Current CBO ( Collector-base Breakdown BR)CB O Voltage ( Collector-emitter Breakdown (B R)CES Voltage ( Collector-Emitter Breakdown (BR)CE O Voltage ( Emitter-Base Breakdown Voltage ...
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... DC Current Gain. Base-emitter Saturation Voltage. Switching Characteristics. Collector-emitter Saturation Voltage. Contours of Constant Transition Frequency. Switching Characteristics. 2N4014 3/6 ...
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... Test Circuit for off PULSE GENERATOR : < < 4/6 TO OSCILLOSCOPE : t 1 > 100 K IN ...
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... TO-18 MECHANICAL DATA mm DIM. MIN. TYP inch MAX. MIN. TYP. 0.500 0.49 5.3 4.9 5.8 0.100 1.2 1. 2N4014 MAX. 0.019 0.208 0.193 0.228 0.047 0.045 A 0016043 5/6 ...
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... Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...