2N4117 InterFET Corporation, 2N4117 Datasheet
2N4117
Manufacturer Part Number
2N4117
Description
N-channel Silicon Junction Field-effect Transistor
Manufacturer
InterFET Corporation
Datasheet
1.2N4117.pdf
(1 pages)
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Quantity
Price
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01/99
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TOÐ72 Package
Dimensions in Inches (mm)
www.interfet.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Amplifiers
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
V
I
V
I
g
g
C
C
GSS
GSS
(BR)GSS
GS(OFF)
fs
os
iss
rss
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
0.015 0.09
– 0.6 – 1.8
– 40
0.03
Min
70
N-Channel Silicon Junction Field-Effect Transistor
2N4117A
2N4117
– 10
Max
0.09
210
– 1
1.5
3
3
Absolute maximum ratings at T
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
– 40
0.08
0.08
Min
– 1
80
2N4118A
2N4118
– 10
0.24
0.24
Max
250
– 1
– 3
1.5
5
3
– 40
Min
100
– 2
0.2
0.2
2N4119A
2N4119
Max
– 10
330
– 1
– 6
0.6
0.6
1.5
10
3
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
Unit
mA
mA
pA
pA
µS
µS
pF
pF
V
V
A
I
V
V
V
V
V
V
V
V
V
G
DS
DS
DS
DS
DS
= 25¡C
GS
GS
DS
DS
= – 1µA, V
= 10V, I
= 10V, V
= 10V, V
= 10V, V
= 10V, V
= – 20V, V
= – 20V, V
= 10V, V
= 10V, V
Process NJ01
FAX
D
Test Conditions
GS
GS
GS
GS
DS
GS
GS
= 1 nA
(972) 276-3375
DS
DS
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
2 mW/°C
300 mW
– 40 V
50 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
B-9
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