2N4220 InterFET Corporation, 2N4220 Datasheet
2N4220
Manufacturer Part Number
2N4220
Description
N-channel Silicon Junction Field-effect Transistor
Manufacturer
InterFET Corporation
Datasheet
1.2N4220.pdf
(1 pages)
B-10
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A
N-Channel Silicon Junction Field-Effect Transistor
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At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
2N4220A, 2N4221A, 2N4222A
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
V
I
V
V
I
g
| Y
g
C
C
NF
GSS
DSS
(BR)GSS
GS(OFF)
fs
os
GS
iss
rss
fs
|
– 0.5 – 2.5
1000 4000 2000 5000 2500 6000
– 30
(50)
Min
750
0.5
2N4220A
2N4220
NJ16
– 0.1
– 0.1
Max
(50)
– 4
2.5
10
3
6
2
Absolute maximum ratings at T
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 150 °C)
(200) (200) (500) (500)
TOÐ72 Package
Dimensions in Inches (mm)
– 30
Min
750
– 1
2N4221A
2
2N4221
NJ16
– 0.1
– 0.1
Max
– 5
– 6
2.5
20
6
6
2
– 30
Min
750
– 2
2N4222A
5
2N4222
NJ32
– 0.1
– 0.1
Max
– 6
– 8
2.5
15
40
6
2
Unit
mA
nA
µA
µA
µS
µS
µS
dB
pF
pF
V
V
V
A
I
V
V
V
V
V
V
V
V
V
V
V
R
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 25¡C
G
= – 1µA, V
= 1 MΩ
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
= – 15V, V
= – 15V, V
= 15V, I
= 15V, I
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
www.interfet.com
Process
D
D
Test Conditions
GS
GS
GS
GS
GS
GS
GS
DS
= ( )
= 0.1 nA
DS
DS
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
= ØV
2 mW/°C
300 mW
– 30 V
10 mA
T
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 100 MHz
A
= 150°C
01/99
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