BCR553E6327 Infineon Technologies Corporation, BCR553E6327 Datasheet
BCR553E6327
Manufacturer Part Number
BCR553E6327
Description
NPN Silicon Digital Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BCR553E6327.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCR553E6327
Manufacturer:
Infineon
Quantity:
20 000
Thermal Resistance
Junction - soldering point
PNP Silicon Digital Transistor
Type
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T
Junction temperature
Storage temperature
1 For calculation of R
BCR553
Switching circuit, inverter, interface circuit,
Built in bias resistor (R
driver circuit
thJA
please refer to Application Note Thermal Resistance
Marking
XBs
1
=2.2k
1)
S
= 79 °C
, R
2
=2.2k
1 = B
B
1
)
R
1
Pin Configuration
R
2
1
C
3
2 = E
R
Symbol
V
V
V
V
I
P
T
T
C
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
EHA07183
2
E
3 = C
-65 ... 150
3
Value
500
330
150
50
50
10
12
215
Package
SOT23
Dec-13-2001
1
BCR553
VPS05161
Unit
V
mA
mW
°C
K/W
2
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BCR553E6327 Summary of contents
Page 1
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =2. Type Marking BCR553 XBs Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage = 100 µ Collector-base breakdown voltage = 10 µ Collector cutoff current = ...
Page 3
DC Current Gain (common emitter configuration Input on Voltage i(on) ...
Page 4
Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0. 0.01 0.005 D = ...