BCR553E6327 Infineon Technologies Corporation, BCR553E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR553E6327
• Description: NPN Silicon Digital Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector cutoff current
V
Emitter cutoff current
V
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Input off voltage
I
Input on Voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
1) Pulse test: t < 300
Collector-base breakdown voltage
I
C
C
C
C
C
C
C
CB
EB
= 100 µA, I
= 50 mA, V
= 50 mA, I
= 100 µA, V
= 10 mA, V
= 50 mA, V
= 10 µA, I
= 10 V, I
= 40 V, I
E
B
E
C
B
CE
CE
CE
CE
= 0
= 2.5 mA
= 0
= 0
= 0
= 5 V
= 0.3 V


= 5 V, f = 100 MHz
= 5 V
s ; D < 2%
A
=25°C, unless otherwise specified
2
Symbol
V
V
I
I
h
V
V
V
R
R
f
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
1
1
/R
2
min.
0.6
1.5
0.9
50
50
40
1
-
-
-
-
Values
typ.
150
2.2
1
-
-
-
-
-
-
-
-
max.
Dec-13-2001
100
3.5
0.3
1.5
1.8
2.9
1.1
-
-
-
-
BCR553
MHz
Unit
nA
-
k
-
V
mA
V