RN4909 Toshiba America Electronic Components, Inc., RN4909 Datasheet
RN4909
Related parts for RN4909
RN4909 Summary of contents
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... TOSHIBA Transistor RN4909 R1: 47kΩ R2: 22kΩ (Q1, Q2 Common) Symbol Rating Unit V −50 V CBO V −50 V CEO V −15 V EBO I −100 mA C Symbol Rating Unit CBO CEO EBO I 100 RN4909 Unit: mm JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg 2001-06-07 ...
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... Q1, Q2 Common Maximum Ratings Characteristic Collector power dissipation Junction temperature Storage temperature range * Total rating Marking Equivalent Circuit (Top View) (Ta = 25° ° ° ° C) Symbol Rating Unit P 200 °C T 150 j °C T −55~150 stg 2 RN4909 2001-06-07 ...
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... ― 10V MHz (Ta = 25°C) Test Symbol Test Condition Circuit R1 ― ― R1/R2 ― ― 3 RN4909 Min Typ. Max Unit ― ― −100 nA ― ― −500 −0.167 ― −0.311 mA 70 ― ― ― ― −0.1 −0.3 V − ...
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... RN4909 2001-06-07 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 RN4909 000707EAA 2001-06-07 ...